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| UTC 2SC5569 NPN EPITAXIAL SILICON TRANSISTOR DC/DC CONVERTER APPLICATIONS FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching. *High allowable power dissipation. *Complementary to 2SA2016. 1 APPLICATIONS *Relay drivers, lamp drivers, motor drivers, strobes SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Tc=25C Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic Icp IB Pc Tj Tstg 2 VALUE 80 50 6 7 10 1.2 1.3* 3.5 150 -55 ~ +150 UNIT V V V A A A W C C * Mounted on ceramic board (250mm x0.8mm) ELECTRICAL CHARACTERISTICS (Ta=25, unless otherwise specified) PARAMETER Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Gain Bandwidth Product Output Capacitance Turn-On Time Storage Time SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton tstg TEST CONDITIONS Ic=10A,IE=0 Ic=1mA,RBE= IE=10A,IE=0 VCB=40V,IE=0 VEB=4V,Ic=0 VCE=2V,Ic=500mA Ic=3.5A,IB=175mA Ic=2A,IB=40mA Ic=2A,IB=40mA VCE=10V,Ic=500mA VCB=10V, f=1MHz See specified Test Circuit See specified Test Circuit MIN 80 50 6 TYP MAX UNIT V V V A A mV mV V MHz pF ns ns 200 160 110 0.83 330 28 30 420 0.1 0.1 560 240 170 1.2 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R208-031,A UTC 2SC5569 NPN EPITAXIAL SILICON TRANSISTOR PARAMETER Fall Time SYMBOL tf TEST CONDITIONS See specified Test Circuit MIN TYP 25 MAX UNIT ns SWITCHING TIME TEST CIRCUIT PW=20s D.C.1% INPUT VR 50 IB1 IB2 RB + 100F OUTPUT + 470F RL V BE= -5V VCC = 25V 20I B1= -20IB2=IC =2.5A 7 90mA Ic - VCE 80mA 8 70mA 60mA 50mA Ic - VBE VCE = 2V 6 100 mA 7 Collector Current, Ic (A) 6 5 4 3 75C Ta= 25 C Collector Current, Ic (A) 5 4 3 40mA 30mA 20mA 10mA 2 1 0 IB=0 0 0.4 0.8 1.2 1.6 Collector to Emitter Voltage, V CE (V) 2.0 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base to Emitter Voltage, V BE (V) -25C 1.4 1000 7 5 DC Current Gain,h FE 3 2 100 7 5 3 2 10 0.01 Ta=75C 25C -25C hFE - Ic Collector-to-Emitter Saturation Voltage, VCE(sat) (mv) VCE = 2V VCE(sat) - Ic 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 IC/IB=20 75C Ta= -25C C 25 23 5 7 0.1 23 5 7 1.0 23 5 7 10 1.0 0.01 2 3 5 7 0.1 23 5 7 1.0 2 3 5 7 10 Collector Current, Ic (A) Collector Current, Ic (A) UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R208-031,A UTC 2SC5569 NPN EPITAXIAL SILICON TRANSISTOR 10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 VCE(sat) - Ic IC/IB=50 Collector-to-Emitter Saturation Voltage, VBE(sat) (mv) Collector-to-Emitter Saturation Voltage, VCE(sat) (mV) 10000 7 5 3 2 1000 7 5 3 2 100 0.01 2 3 5 7 0.1 Ta =-25 VBE(sat) - Ic IC/IB=50 75C 25C 75 Ta = 25C -25C 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 1.0 2 3 5 7 10 Collector Current,Ic -A 5 Output Capacitance, Cob (pF) 3 2 100 7 5 3 2 10 7 5 3 2 Collector Current, Ic (A) 1000 7 5 3 2 100 7 5 3 2 10 Cob - V CB Gain-Bandwidth Produtc, f T (MHz) f=1MHz fT - Ic VCE=10V 5 7 0.1 2 3 5 7 1.0 23 5 7 10 23 5 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector Current, Ic (A) Collector to Base Voltage, V CB (V) 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO ICP=10A 100ms 1m 10 s m s DC 2.0 Collector Dissipation, PC (W) 0 10 Pc - Ta IC=7A Collector Current, Ic (A) 1.5 1.3 1.0 Mo u nte d s 0 50 s op er at io n on a ce ra mi c bo ar d 0.5 (2 50 0.01 0.1 Tc=25C Single pulse For PNP,the minus sign is omitted. mm x 2 0.8 2 3 5 7 1.0 2 3 5 7 10 23 5 7 100 0 mm ) 0 20 40 60 80 100 120 140 160 Collector to Emitter Voltage, V CE (V) Ambient Temperature, Ta() UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R208-031,A UTC 2SC5569 NPN EPITAXIAL SILICON TRANSISTOR 4.0 3.5 Collector Dissipation, Pc (W) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 Pc - Tc Case Temperature, Tc(C) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 4 QW-R208-031,A |
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